2.4 GHz GaN/Si PAs and a 2.4/5 GHz GIPD Diplexer Using High Resistivity Si Substrate and a 3-10 GHz LNA Using Standard MOS Process

2.4 GHz GaN/Si PAs and a 2.4/5 GHz GIPD Diplexer Using High Resistivity Si Substrate and a 3-10 GHz LNA Using Standard MOS Process

碩士 === 國立交通大學 === 電信工程研究所 === 107

Bibliographic Details
Main Authors: Lei, Fang-Yu, 雷芳瑜
Other Authors: Meng, Chin-Chun
Format: Others
Language:zh-TW
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/ynayxv
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spelling ndltd-TW-107NCTU54351072019-11-26T05:16:54Z http://ndltd.ncl.edu.tw/handle/ynayxv 2.4 GHz GaN/Si PAs and a 2.4/5 GHz GIPD Diplexer Using High Resistivity Si Substrate and a 3-10 GHz LNA Using Standard MOS Process 用高阻值矽基板實現2.4 GHz氮化鎵功率放大器及2.4/5 GHz GIPD分工器和3~10 GHz標準MOS製程低雜訊放大器 Lei, Fang-Yu 雷芳瑜 碩士 國立交通大學 電信工程研究所 107 Meng, Chin-Chun 孟慶宗 2019 學位論文 ; thesis 75 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立交通大學 === 電信工程研究所 === 107
author2 Meng, Chin-Chun
author_facet Meng, Chin-Chun
Lei, Fang-Yu
雷芳瑜
author Lei, Fang-Yu
雷芳瑜
spellingShingle Lei, Fang-Yu
雷芳瑜
2.4 GHz GaN/Si PAs and a 2.4/5 GHz GIPD Diplexer Using High Resistivity Si Substrate and a 3-10 GHz LNA Using Standard MOS Process
author_sort Lei, Fang-Yu
title 2.4 GHz GaN/Si PAs and a 2.4/5 GHz GIPD Diplexer Using High Resistivity Si Substrate and a 3-10 GHz LNA Using Standard MOS Process
title_short 2.4 GHz GaN/Si PAs and a 2.4/5 GHz GIPD Diplexer Using High Resistivity Si Substrate and a 3-10 GHz LNA Using Standard MOS Process
title_full 2.4 GHz GaN/Si PAs and a 2.4/5 GHz GIPD Diplexer Using High Resistivity Si Substrate and a 3-10 GHz LNA Using Standard MOS Process
title_fullStr 2.4 GHz GaN/Si PAs and a 2.4/5 GHz GIPD Diplexer Using High Resistivity Si Substrate and a 3-10 GHz LNA Using Standard MOS Process
title_full_unstemmed 2.4 GHz GaN/Si PAs and a 2.4/5 GHz GIPD Diplexer Using High Resistivity Si Substrate and a 3-10 GHz LNA Using Standard MOS Process
title_sort 2.4 ghz gan/si pas and a 2.4/5 ghz gipd diplexer using high resistivity si substrate and a 3-10 ghz lna using standard mos process
publishDate 2019
url http://ndltd.ncl.edu.tw/handle/ynayxv
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