2.4 GHz GaN/Si PAs and a 2.4/5 GHz GIPD Diplexer Using High Resistivity Si Substrate and a 3-10 GHz LNA Using Standard MOS Process

2.4 GHz GaN/Si PAs and a 2.4/5 GHz GIPD Diplexer Using High Resistivity Si Substrate and a 3-10 GHz LNA Using Standard MOS Process

碩士 === 國立交通大學 === 電信工程研究所 === 107

Bibliographic Details
Main Authors: Lei, Fang-Yu, 雷芳瑜
Other Authors: Meng, Chin-Chun
Format: Others
Language:zh-TW
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/ynayxv

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