Development of a Rapid EGFET-based Cardiac Troponin I Microsensor with High Sensitivity for Detecting Myocardial Infarction

• Main Authors: Tung-Lin Li, 李東霖
• Other Authors: I-Yu Huang
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/u46sxm

碩士 === 國立中山大學 === 電機工程學系研究所 === 107 === According to the 106-year statistics of the Ministry of Health and Welfare, the heart disease is the second highest cause of death among Taiwanese people. Compared with cancer, heart disease has no obvious symptoms, and it is easy to be ignored. Myocardial infarction is the most terrible in heart disease. The diseased population is not limited to old age or sickness. Even obesity or even long-term maintenance of the same posture may cause thrombosis, which may lead to myocardial infarction. When cardiomyocytes are hypoxic and necrotic due to thrombosis, cardiac troponin I (cTnI) is released into the bloodstream. Therefore, the risk of myocardial infarction can be determined by detecting the cTnI in the blood. If the detection of cardiac troponin I can be as convenient and immediate as testing blood glucose, it can not only accelerate the progress of diagnosis and treatment, but also reduce the heart damage, and can also improve the survival rate after the onset. In order to diagnose early, this thesis aim to develop a rapid extended gate field-effect-transistor (EGFET)-based cardiac troponin I microsensor for detecting myocardial infarction. In this paper, an EGFET and a planar micro reference electrode are integrated on the same chip by utilizing micro-electromechanical systems (MEMS). The antibodies of cTnI are immobilized on the extended sensing gate using self-assembled monolayer (cystamine-glutaraldehyde) method. The total main processing steps include six photolithography and six thin-film deposition processes to produce EGFETs and quasi-reference electrodes. In addition, two photolithography and two thin-film deposition processes are used to complete the fabrication of packaged chips. The chip size of the proposed EGFET-based cTnI microsensor is 0.925 cm × 0.955 cm × 0.1 cm, and the sensing area is 1 mm × 1 mm. According to the measurement results, a very high sensitivity (255 mV/dec) and sensing linearity (0.946) of the cTnI microsensor can be demonstrated as the cTnI concentration varies from 0.0125 ng/mL to 0.1 ng/mL.