Study on Simulation of Dressing Locus of Multiple Diamonds on Soft and Ductile Polyurethane Pad

• Main Authors: Ze-Yuan Wang, 王澤源
• Other Authors: Chao-Chang Chen
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/7jmx7w

碩士 === 國立臺灣科技大學 === 機械工程系 === 107 === Chemical Mechanical Planarization/Polishing (CMP) process plays an important role in IC fabrication quality control in whole semiconductor fabrication. In order to maintain the yield rate of wafer in CMP process, the diamond dressing technique has been applied for conditioning the uniformity of pad’s surface topography. For better understanding of the surface topography in CMP process, this study focuses on each diamond’s dressing locus on the polishing pad by both simulation and the on-site experiments. It has been performed by the experiment of diamond dressing on the PMMA sheet and ICSU pad, then calculated the number of overlapping points on the dressing locus via the simulation program. First, diamond dressing locus is determined by mathematical formulae and overlapping points in each focus zone are analyzed by simulation. Then, simulation results are verified by experiments of PMMA sheet and ICSU pad on HAMAI polishing machine. Finally, the position-calibration method of dresser and platen on the polishing machine are established to make the error decreasing. The experiments of PMMA sheet and ICSU pad discover the roughness increasing while the number of diamonds increasing, and PCR are also increased largely. The error results of PMMA sheet between simulated and experimental result is about 5% to 10%. It has been proven that overlapping points are positive correlation with surface roughness. The surface roughness and COF under wet dressing are lower than dry dressing.