Improving Breakdown Voltage for Double-Channel AlGaN/GaN HEMTs with Air-Bridge Field Plate and Slant Field Plate
碩士 === 國立雲林科技大學 === 電子工程系 === 107 === A high electron mobility transistor (HEMT) is composed of one or more III-V heterostructures. It has excellent performance with high electron density and mobility. This study focuses on optimizing the structure of an AlGaN/GaN HEMT to improve the breakdown volta...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/qsqzrw |