Electrical properties of dislocations within the nitride based semiconductors gallium nitride and indium nitride
Dislocation lines affect the electrical and optical properties of semiconductors. In this research, the effect that the threading dislocation lines have on the free electron concentration and the electron mobility within gallium nitride and indium nitride is investigated. A formulation is developed...
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| Language: | English |
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University of British Columbia
2012
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| Online Access: | http://hdl.handle.net/2429/43581 |