Graphene Hot-electron Transistors

Graphene Hot-electron Transistors

Graphene base transistors (GBTs) have been, recently, proposed to overcome the intrinsic limitations of the graphene field effect transistors (GFETs) and exploit the graphene unique properties in high frequency (HF) applications. These devices utilize single layer graphene as the base material in th...

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Bibliographic Details
Main Author: Vaziri, Sam
Format: Doctoral Thesis
Language:English
Published: KTH, Integrerade komponenter och kretsar 2016
Subjects:
Graphene
hot-electron transistors
graphene base transistors
GBT
cross-plane carrier transport
tunneling
ballistic transport
heterojunction transistors
graphene integration
graphene transfer
Engineering and Technology
Teknik och teknologier
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-186044
http://nbn-resolving.de/urn:isbn:978-91-7595-932-0

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-186044
http://nbn-resolving.de/urn:isbn:978-91-7595-932-0

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