Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics

Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density an...

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Bibliographic Details
Main Author: Colmenares, Juan
Format: Doctoral Thesis
Language:English
Published: KTH, Elkraftteknik 2016
Subjects:
Cryogenic
Gallium Nitride
Gate Driver
Harsh Environments
High Efficiency Converter
High Temperature
MOSFETs
Normally- ON JFETs
Reliability
Silicon Carbide
Wide-Band Gap Semiconductors
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-192626
http://nbn-resolving.de/urn:isbn:978-91-7729-109-1

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-192626
http://nbn-resolving.de/urn:isbn:978-91-7729-109-1

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