Design of microwave low-noise amplifiers in a SiGe BiCMOS process
In this thesis, three different types of low-noise amplifiers (LNA’s) have been designed using a 0.25 mm SiGe BiCMOS process. Firstly, a single-stage amplifier has been designed with 11 dB gain and 3.7 dB noise figure at 8 GHz. Secondly, a cascode two-stage LNA with 16 dB gain and 3.8 dB noise figur...
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| Format: | Others |
| Language: | English |
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Linköpings universitet, Institutionen för systemteknik
2003
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1530 |