A study of HfO₂-based MOSCAPs and MOSFETs on III-V substrates with a thin germanium interfacial passivation layer
Since metal-oxide-semiconductor (MOS) devices have been adopted into integrated circuits, the endless demands for higher performance and lower power consumption have been a primary challenge and a technology-driver in the semiconductor electronics. The invention of complementary MOS (CMOS) technolog...
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| Format: | Others |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/2152/17914 |