Effects of scaling and grain structure on electromigration reliability of Cu interconnects
Electromigration (EM) remains a major reliability concern for on-chip Cu interconnects due to the continuing scaling and the introduction of new materials and processes. In Cu interconnects, the atomic diffusion along the Cu/SiCN cap interface dominates the mass transport and thus controls EM reliab...
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| Format: | Others |
| Language: | English |
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2011
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| Online Access: | http://hdl.handle.net/2152/ETD-UT-2010-12-2136 |