RADIATION RESPONSE AND RELIABILITY OF AlGaN/GaN HEMTS
Gallium Nitride (GaN)-based devices are used in space-based high power, high frequency applications due to high breakdown voltage and high carrier mobility and the large bandgap of GaN. The radiation effects and hot carrier degradation of AlGaN/GaN HEMTs are investigated in this work. Low frequency...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2013
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-06272013-203146/ |