Thermal Stability of Al₂O₃/Silicone Composites as High-Temperature Encapsulants
Conventional microelectronic and power electronic packages based on Si devices usually work below 150°C. The emergence of wide-bandgap devices, which potentially operate above a junction temperature of 250°C, results in growing research interest in high-density and high-temperature packaging. There...
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Virginia Tech
2014
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| Online Access: | http://hdl.handle.net/10919/50593 |