Electromigration in Gold Interconnects
abstract: Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium ar...
Other Authors: | |
---|---|
Format: | Doctoral Thesis |
Language: | English |
Published: |
2013
|
Subjects: | |
Online Access: | http://hdl.handle.net/2286/R.I.20914 |