Integrated optical components produced in GaAs and InP epitaxial layers using the photo-elastic effect
Studies have been made of optical waveguides produced in GaAs and InP epitaxial layers. Of the possible waveguiding mechanisms present in these devices the contribution from the photo-elastic effect (strain-induced refractive index changes) dominates. Stresses in evaporated metal films and their con...
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University of Sheffield
1982
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329302 |