New precursors for the deposition of Hf02 and ZrO2 by MOCVD and ALD
Zr02 and Hf02 are two high-pemitivity (lC) dielectric oxides that are currently being investigated as alternatives to Si02 as the dielectric insulating layer in subO. lflm CMOS technolqgy and capacitor layers in .the next generation DRAM. Metal organic chemical vapour deposition (MOCVD) and atomic l...
| Main Author: | |
|---|---|
| Published: |
University of Liverpool
2007
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.485849 |