Mid-infrared antimonide based type II quantum dot lasers for use in gas sensing
Type II InSb/InAs quantum dots (QDs) emitting in the 3-4 µm range are promising candidate as the gain medium for semiconductor laser diodes. The molecular beam epitaxy (MBE) growth of the QDs on GaAs and InP substrates can largely cut down the costs for future devices and massively broaden its appli...
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Lancaster University
2015
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.656985 |