Secondary ion mass spectrometry and resonant ionisation mass spectrometry studies of nickel contacts to silicon carbide
Time-of-flight secondary ion mass spectrometry (TOF-SIMS) and resonant ionisation mass spectrometry (RIMS) have been used to perform depth profile analyses on nickel (Ni) contacts to silicon carbide (SiC) to understand the interfacial properties. In particular, as-deposited Schottky contacts and hig...
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Swansea University
2004
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.751955 |