Metallization of CVD diamond using metal oxide intermediate layers for electronics packaging

The high thermal conductivity of chemically vapor deposited CVD diamond (up to 2000 W/m/K) and its low dielectric constant (approx. 5.6) makes it highly desirable for use as an electronics packaging substrate material. To make CVD diamond amenable to thick film metallization via standard industrial...

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Bibliographic Details
Main Author: Kroll, Darwin E
Other Authors: NA
Language:English
Published: Monterey, California. Naval Postgraduate School 2013
Online Access:http://hdl.handle.net/10945/26062