Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa2O4

Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa2O4

We report the elevated temperature (22 °C ≤ T ≤ 600 °C) dielectric function properties of melt grown single crystal ZnGa2O4 using a spectroscopic ellipsometry approach. A temperature dependent Cauchy dispersion analysis was applied across the transparent spectrum to determine the high-frequency inde...

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Bibliographic Details
Main Authors: Abakar, A. (Author), Galazka, Z. (Author), Hilfiker, M. (Author), Irmscher, K. (Author), Kilic, U. (Author), Koeppe, N. (Author), Korlacki, R. (Author), Rivera, J. (Author), Schubert, M. (Author), Stokey, M. (Author), Traouli, Y. (Author), Williams, E. (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2022
Subjects:
Band-to-band transition
Cauchy dispersion
Dielectric functions
Elevated temperature
Exciton band
Excitons
Function properties
Gallium compounds
High-frequency dielectrics
Melt-grown
Red Shift
Refractive index
Single crystals
Spectroscopic analysis
Spectroscopic ellipsometry
Temperature dependent
Transition frequencies
Zinc compounds
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