A high-speed low side GaN e-HEMT driver with gate ringing and overshoot suppression

A new circuit architecture to drive GaN e-HEMT power device was proposed in this work, which was taped out on TSMC 0.18 um BCD process and successfully tested. With the proposed driver circuit, gate voltage overshoot as well as ringing on GaN e-HEMT device has been successfully suppressed, while not...

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Bibliographic Details
Main Authors: Jin, J. (Author), Sun, M. (Author), Xu, M. (Author), Yang, Y. (Author), Zhang, D.W (Author)
Format: Article
Language:English
Published: Institute of Electronics Information Communication Engineers 2022
Subjects:
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