Recent developments in deca-nanometer vertical MOSFETs
We report simulations and experimental work relating to innovations in the area of ultra short channel vertical transistors. The use of dielectric pockets can mitigate short channel effects of charge sharing and bulk punch-through; thickened oxide regions can minimize parasitic overlap capacitance i...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2004.
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| Subjects: | |
| Online Access: | Get fulltext |