Reduction of boron diffusion in silicon-germanium by fluorine implantation
This paper investigates the effect of a 185 keV, 2.3×10<sup>15</sup>cm<sup>-2</sup> F<sup>+</sup> implant on boron thermal diffusion and boron transient enhanced diffusion (TED) in SiGe by characterising the diffusion of a boron marker layer in samples with and wi...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
2004.
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| Subjects: | |
| Online Access: | Get fulltext |