110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression
This paper investigates how fluorine implantation can be used to suppress boron diffusion in the base of a double polysilicon silicon bipolar transistor and hence deliver a record fT of 110 GHz. Secondary Ion Mass Spectroscopy (SIMS) and transmission electron microscopy are used to characterize the...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
2006-03.
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Subjects: | |
Online Access: | Get fulltext |