Effect of fluorine on boron diffusion under interstitial injection from the surface
In this paper, a point defect injection study is performed to investigate the effect of fluorine on boron diffusion when interstitials are injected from the surface. 185keV, 2.3x1015 cm-2 fluorine is implanted into silicon with a boron marker layer located at about Rp/2 of the fluorine implant. This...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2006-12.
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| Subjects: | |
| Online Access: | Get fulltext |