Effect of <italic>In-Situ</italic> Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs

by Jae-Hoon Lee, Ki-Sik Im, Jung-Hee Lee
Published 2021-01-01

ZnON MIS Thin-Film Diodes

by Mohamad Hazwan Mohd Daut, John F. Wager, Arokia Nathan
Published 2019-01-01

Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf_0.5Zr_0.5O₂-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions

by Zhiwei Liu, Puyang Cai, Songhai Yu, Linxin Han, Runsheng Wang, Yanqing Wu, Pengpeng Ren, Zhigang Ji, Ru Huang
Published 2021-01-01

Investigation on Stability of p-GaN HEMTs With an Indium&#x2013;Tin&#x2013;Oxide Gate Under Forward Gate Bias

by Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang
Published 2021-01-01

Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model

by Ko-Hsin Lee, Axel Erlebach, Oleg Penzin, Lee Smith
Published 2021-01-01

Foreword Special Issue on the 2nd Latin American Electron Device Conference

by Lluis F. Marsal, Arturo Escobosa, Benjamin Iniguez, Fernando Guarin
Published 2021-01-01

Determining the Electrical Charging Speed Limit of ReRAM Devices

by M. von Witzleben, S. Walfort, R. Waser, S. Menzel, U. Bottger
Published 2021-01-01

Two-Dimensional Transient Temperature Distribution Measurement of GaN Light-Emitting Diode Using High Speed Camera

by Guangheng Xiao, Wujun Du, Zhiyun Wang, Guolong Chen, Lihong Zhu, Yulin Gao, Zhong Chen, Ziquan Guo, Yijun Lu
Published 2021-01-01

A Modified NMOS Inverter With Rail-To-Rail Output Swing and Its Application in the Gate Driver Integrated by Metal Oxide TFTs

by Pei-An Zou, Jun-Wei Chen, Kai Xiang, Lei Zhou, Jian-Hua Zou, Miao Xu, Lei Wang, Wei-Jing Wu, Jun-Biao Peng, Mansun Chan
Published 2021-01-01

A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode

by Jinping Zhang, Zixun Chen, Yuanyuan Tu, Xiaochuan Deng, Bo Zhang
Published 2021-01-01

Low Loss and Low EMI Noise CSTBT With Split Gate and Recessed Emitter Trench

by Jinping Zhang, Xiang Xiao, Rongrong Zhu, Qian Zhao, Bo Zhang
Published 2021-01-01

Size Effects of Poly-Si Formed by Laser Annealing With Periodic Intensity Distribution on the TFT Characteristics

by Akira Mizutani, Fuminobu Hamano, Daisuke Nakamura, Tetsuya Goto, Siti Rahmah Aid, Hiroshi Ikenoue
Published 2021-01-01

Junction Design and Complementary Capacitance Matching for NCFET CMOS Logic

by Reinaldo A. Vega, Takashi Ando, Timothy M. Philip
Published 2021-01-01

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

by Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao
Published 2021-01-01

Research on ESD Protection of Ultra-High Voltage nLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift Region

by Tien-Yu Lan, Shen-Li Chen, Hung-Wei Chen, Yi-Mu Lee
Published 2021-01-01

Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model

by Mamta Pradhan, Mohammed Alomari, Matthias Moser, Dirk Fahle, Herwig Hahn, Michael Heuken, Joachim N. Burghartz
Published 2021-01-01

Simultaneous Analysis of Multi-Variables Effect on the Performance of Multi-Domain MFIS Negative Capacitance Field-Effect Transistors

by Guan-You He, Ming-Hao Li, Wei-Dong Liu, Lei-Ying Ying, Bao-Ping Zhang, Zhi-Wei Zheng, Chun-Hu Cheng
Published 2021-01-01

Memory Operation of Z&#x00B2;-FET Without Selector at High Temperature

by S. Kwon, C. Navarro, F. Gamiz, S. Cristoloveanu, Y.-T. Kim, J. Ahn
Published 2021-01-01

Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor With Source/Drain Regions Doped by Al Reaction

by Huan Yang, Jiye Li, Xiaoliang Zhou, Lei Lu, Shengdong Zhang
Published 2021-01-01

Efficient and Optimized Methods for Alleviating the Impacts of IR-Drop and Fault in RRAM Based Neural Computing Systems

by Chenglong Huang, Nuo Xu, Keni Qiu, Yujie Zhu, Desheng Ma, Liang Fang
Published 2021-01-01