Showing 1 - 9 results of 9 for search 'COMPUTER-AIDED DESIGN', query time: 1.05s Refine Results
  1. 1
    Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET)
    by Hwa Young Gu, Sangwan Kim
    Published 2019-03-01
    “... computer-aided design (TCAD) simulation. As a result, double-gate isosceles trapezoid (DGIT) TFET shows a...”
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    Article
  2. 2
    Investigation on Temperature Dependency of Recessed-Channel Reconfigurable Field-Effect Transistor
    by Jang Hyun Kim, Sangwan Kim
    Published 2019-10-01
    “..., the validity has been examined by a technology computer-aided design (TCAD) simulation with different Schottky...”
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    Article
  3. 3
    Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET)
    “... transistor (TFET) has been discussed with the help of technology computer-aided design (TCAD) simulation...”
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    Article
  4. 4
    F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application
    “... been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided...”
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    Article
  5. 5
    Methodology to Investigate Impact of Grain Orientation on Threshold Voltage and Current Variability in Tunneling Field-Effect Transistors
    “...>) and threshold voltage (V<sub>T</sub>) with help of technology computer-aided design (TCAD) simulation. Secondly...”
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    Article
  6. 6
    Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
    “... with the SiGe control group. In addition, technology computer-aided design (TCAD) simulation is performed...”
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    Article
  7. 7
    Analysis of Work-Function Variation Effects in a Tunnel Field-Effect Transistor Depending on the Device Structure
    by Garam Kim, Jang Hyun Kim, Jaemin Kim, Sangwan Kim
    Published 2020-08-01
    “..., and electron-hole bilayer TFET (EHBTFET) were examined by technology computer-aided design (TCAD) simulations...”
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    Article
  8. 8
    Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor
    “... (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design...”
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    Article
  9. 9
    Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs
    “... are improved. In order to validate the HGD, technology computer-aided design (TCAD) simulation is performed...”
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    Article
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