Showing 1 - 15 results of 15 for search 'ELECTRONIC AND SEMICONDUCTOR MATERIALS', query time: 0.71s Refine Results
  1. 1
    III-V compound semiconductor transistors-from planar to nanowire structures
    Get fulltext
    Article
  2. 2
    The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects
    by del Alamo, Jesus A.
    Published 2014
    Get fulltext
    Article
  3. 3
    Impact of 〈110〉 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors
    by del Alamo, Jesus A., Xia, Ling
    Published 2010
    “...Impact of <110> uniaxial strain on n-channel In[subscript 0.15]Ga[subscript 0.85]Na high electron...”
    Get fulltext
    Article
  4. 4
    Injection velocity in thin-channel InAs HEMTs
    by Kim, Tae-Woo, del Alamo, Jesus A.
    Published 2012
    Get fulltext
    Article
  5. 5
    Performance analysis of ultra-scaled InAs HEMTs
    Get fulltext
    Article
  6. 6
    The prospects for 10 nm III-V CMOS
    by del Alamo, Jesus A., Kim, D.-H
    Published 2012
    Get fulltext
    Article
  7. 7
    III-V CMOS: What have we learned from HEMTs?
    Get fulltext
    Article
  8. 8
    Mobility enhancement in indium-rich N-channel In[subscript x]Ga[subscript 1-x]As HEMTs by application of <110> uniaxial strain
    by Xia, Ling, del Alamo, Jesus A.
    Published 2012
    Get fulltext
    Article
  9. 9
    Logic characteristics of 40 nm thin-channel InAs HEMTs
    Get fulltext
    Article
  10. 10
    60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics
    Get fulltext
    Article
  11. 11
    Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs
    Get fulltext
    Article
  12. 12
    Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS technologies
    by del Alamo, Jesus A.
    Published 2015
    Get fulltext
    Article
  13. 13
    30 nm In[subscript 0.7]Ga[subscript 0.3]As inverted-type HEMTs with reduced gate leakage current for logic applications
    Get fulltext
    Article
  14. 14
    Scalability of sub-100 nm thin-channel InAs PHEMTs
    by del Alamo, Jesus A., Kim, Dae-Hyun
    Published 2010
    Get fulltext
    Article
  15. 15
    Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs
    Get fulltext
    Article
Search Tools: Get RSS Feed — Email this Search