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1“... sensing material on the sensing performance of each sensing device is studied. First, the hydrogen-sensing...”
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2by Ching-Wen Hung, 洪慶文“... compound semiconductor based hydrogen sensors, including Schottky diodes, field-effect resistors...”
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3“..., are fabricated and studied. III-V compound semiconductors, such as AlGaN- and InAlAs-based materials, are served...”
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4“... were developed. With the quick development of the fabrication technologies, semiconductor based gas...”
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5“...., Pd and Pt, are used as the gate material. These studied devices are investigated under different...”
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6“... and velocities in III-V compound semiconductor materials make GaAs- or InP-based heterojunction bipolar...”
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7“... been proposed, the concerning semiconductor-type hydrogen sensors are extensively fabricated...”
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8“... HFETs. Second, a comparison is made for metal-semiconductor and metal-oxide-semiconductor field-effect...”
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9“... HFETs. Second, a comparison is made for metal-semiconductor and metal-oxide-semiconductor field-effect...”
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10“... developed. With the progress of the semiconductor fabrication technologies, semiconductor-based gas sensors...”
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11“... compound semiconductors, such as AlGaN- and GaN-based materials, serve as sensing platforms. Since...”
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12“... Schottky diode hydrogen-sensing devices. The nanospheres (nanoparticles) are used to make different...”
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13“... on III-V compound semiconductor material systems have many prospects in digital and microwave...”
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14“... hydrogen sensors are proposed. By using the catalytic metals (Pd or Pt) as the gate materials, the hydrogen...”
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15“... compound semiconductor material systems have attracted great attention for digital and microwave...”
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16“... compound semiconductor material systems have been widely applied in digital and microwave circuit...”
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17“... compound semiconductor based hydrogen sensors, including Schottky diodes, heterostructure field-effect...”
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