Showing 1 - 20 results of 25 for search 'MATERIAL AND SEMICONDUCTOR DEVICES', query time: 0.96s Refine Results
  1. 1
    Plasma Enhanced Chemical Vapor Deposited Materials and Organic Semiconductors in Photovoltaic Devices
    Subjects: “...pecvd materials...”
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    Article
  2. 2
    THE SEMICONDUCTOR THERMOELECTRIC DEVICE FOR TEMPERATURE CONTROL OF COMPUTER PROCESSOR WITH USE OF MATERIALS IN THE CONDITION OF PHASE TRANSITION
    by H. M. Gadjiyev, D. A. Chelushkin
    Published 2016-07-01
    Subjects: “...a semiconductor thermoelectric device...”
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    Article
  3. 3
    THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP
    by B. A. Shangereeva
    Published 2016-07-01
    Subjects: “...material...”
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    Article
  4. 4
    MATHEMATICAL MODELING OF THERMAL PROCESSES IN THE THERMOELECTRIC SEMICONDUCTOR DEVICES WITH A PULSE POWER
    by T. A. Ismailov, A. B. Sulin, T. A. Chelushkina
    Published 2016-07-01
    Subjects: “...thermoelectric devices...”
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    Article
  5. 5
    Equipment for growing semiconductor heterostructures in outer space
    Subjects: “...space materials science...”
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    Article
  6. 6
    DECOMPRESSION SEMICONDUCTOR THERMOELECTRIC DESALINATOR WITH UV RADIATION
    by H. M. Gadzhiev, D. S. Gadzhiev, I. M. Kurbanov
    Published 2020-01-01
    Subjects: “...decompression semiconductor thermoelectric desalinator...”
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    Article
  7. 7
    CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS
    “...The development and research of new constructive solutions, materials and technologies for sensor...”
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    Article
  8. 8
    Simulation of the processes of the electrons transfer in the semiconductor structure based on graphene
    by V. V. Murav'ev, V. N. Mishchenka
    Published 2019-06-01
    “... positive properties, is promising for the creation of new semiconductor devices with good output...”
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    Article
  9. 9
    Simulation of electron transfer processes in a semiconductor structure using graphene and boron nitride
    by V. V. Muravyov, V. N. Mishchenka
    Published 2020-11-01
    “... of new semiconductor devices with good performance for high frequency ranges. The use of graphene, which...”
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    Article
  10. 10
    Thermochemical Preparation and Properties of Low-Cost Polylanthanide Manganite Materials of Ln(La, Ce, Nd, Pr)<sub>x</sub>Ca<sub>y</sub>MnO<sub>3</sub>-Type with Perovskite-Fluorite Structure
    by V. A. Gorbunova, L. M. Sliapniova, A. V. Gorbunov
    Published 2020-11-01
    Subjects: “...conductive materials...”
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    Article
  11. 11
    PHOTONICS TECHNOLOGY AS A WAY FOR UPGRADING KEY TECHNICAL FEATURES OF RADIO-SIGNAL DELAY DEVICES
    Subjects: “...radio-frequency delay device...”
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    Article
  12. 12
    Features of laser diodes' radiation in different temperature intervals
    by Vlasova S. V., Vlasov A. B., Shapochkin P. Yu.
    Published 2017-12-01
    Subjects: “...semiconductor laser diodes...”
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    Article
  13. 13
    Intensity determination of the scattering rates in the monolayer graphene
    by V. V. Murav'ev, V. N. Mishchenka
    Published 2019-06-01
    Subjects: “...semiconductor structure...”
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    Article
  14. 14
    Back-Side Electron-Bombarded Silicon pin-Strip
    Subjects: “...hybrid photoelectric device...”
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    Article
  15. 15
    THE INTENSITY OF SCATTERING OF CHARGE CARRIERS IN GRAPHENE, LOCATED ON A SUBSTRATE OF HEXAGONAL BORON NITRIDE
    by V. V. Muraviev, V. N. Mishchenko
    Published 2019-12-01
    Subjects: “...semiconductor structure...”
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    Article
  16. 16
    ENERGY EFFICIENT DESALINATOR
    Subjects: “...thin-film semiconductor thermoelectric heat pump of cylindrical shape...”
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    Article
  17. 17
    Electronic and magnetic properties of ABO<sub>3</sub> perovskites (A - Ca, Ce, Y, Na; B - Ti, Nb, Fe, Mn, Ta; O)
    Subjects: “...semiconductor...”
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    Article
  18. 18
    Influence of Cd<sub>х</sub>Hg<sub>1-х</sub>Te epitaxial layers defects on photo-electric parameters of matrix detector devices
    by V. V. Arbenina, A. S. Kashuba, Е. V. Permikina
    Published 2013-12-01
    Subjects: “...matrix detector devices, matrix photosensitive elements, heteroepitaxial layers, solid solutions...”
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    Article
  19. 19
    Terahertz generation from surface of the bulk and monolayer tungsten diselenide
    by D. I. Khusyainov, A. V. Gorbatova, A. M. Buryakov
    Published 2020-12-01
    Subjects: “...two dimensional semiconductors...”
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    Article
  20. 20
    Method of protection of the electronic equipment from pulse X-ray radiation
    by Gnatyuk V. S., Morozov N. N.
    Published 2017-12-01
    “... due to the thyratron effect in p-n transitions of semiconductor electronic devices. The work has shown...”
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    Article
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