Showing 1 - 20 results of 51 for search 'SEMICONDUCTOR DEVICES', query time: 0.35s Refine Results
  1. 1
    Impacts of Cu-Doping on the Performance of La-Based RRAM Devices
    by Yongte Wang, Hongxia Liu, Xing Wang, Lu Zhao
    Published 2019-07-01
    “... on the resistive switching behaviors of La-based resistive switching access memory (RRAM) devices have been...”
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    Article
  2. 2
    Robust and Latch-Up-Immune LVTSCR Device with an Embedded PMOSFET for ESD Protection in a 28-nm CMOS Process
    “... technology. The proposed device possesses a lower trigger voltage of ~ 6.2 V and a significantly higher...”
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    Article
  3. 3
    TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance
    by Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang, Haiwu Xie
    Published 2020-03-01
    “...The device structure of DLTFET is optimized by the Silvaco TCAD software to solve the problems...”
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    Article
  4. 4
    Impacts of LaOx Doping on the Performance of ITO/Al<sub>2</sub>O<sub>3</sub>/ITO Transparent RRAM Devices
    by Guodu Han, Yanning Chen, Hongxia Liu, Dong Wang, Rundi Qiao
    Published 2021-01-01
    “... for comparison. The electrical characteristics of the devices were analyzed by Agilent B1500A semiconductor...”
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    Article
  5. 5
    Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition
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  6. 6
    Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer
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    Article
  7. 7
    A 130 GHz Electro-Optic Ring Modulator with Double-Layer Graphene
    by Lei Wu, Hongxia Liu, Jiabin Li, Shulong Wang, Sheng Qu, Lu Dong
    Published 2017-02-01
    “... the process compatible with the Complementary Metal Oxide Semiconductors (CMOS) process. This will provide...”
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    Article
  8. 8
    Optical Transport Properties of Graphene Surface Plasmon Polaritons in Mid-Infrared Band
    by Yindi Wang, Hongxia Liu, Shulong Wang, Ming Cai, Lan Ma
    Published 2019-07-01
    “...-based optoelectronic devices. Thus, they can be used to manufacture subwavelength devices. The work...”
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    Article
  9. 9
    A New Electro-Optical Switch Modulator Based on the Surface Plasmon Polaritons of Graphene in Mid-Infrared Band
    by Ming Cai, Shulong Wang, Bo Gao, Yindi Wang, Tao Han, Hongxia Liu
    Published 2018-12-01
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    Article
  10. 10
    The Influence of Copper Substrates on Irradiation Effects of Graphene: A Molecular Dynamics Study
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    Article
  11. 11
    Design and Investigation of the Junction-Less TFET with Ge/Si<sub>0.3</sub>Ge<sub>0.7</sub>/Si Heterojunction and Heterogeneous Gate Dielectric
    “... semiconductor material germanium to obtain the higher on-state current; the gate dielectric adjacent...”
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    Article
  12. 12
    A Horizontal-Gate Monolayer MoS<sub>2</sub> Transistor Based on Image Force Barrier Reduction
    by Kun Yang, Hongxia Liu, Shulong Wang, Wei Li, Tao Han
    Published 2019-09-01
    “... of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility...”
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    Article
  13. 13
    Graphene-Hexagonal Boron Nitride Heterostructure as a Tunable Phonon–Plasmon Coupling System
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  14. 14
    Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN Material
    by Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang, Kun Yang
    Published 2021-08-01
    “...Functional devices that use vertical van der Waals (vdWs) heterostructure material can effectively...”
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    Article
  15. 15
    A Multi-level Memristor Based on Al-Doped HfO2 Thin Film
    by Lei Wu, Hongxia Liu, Jiabin Li, Shulong Wang, Xing Wang
    Published 2019-05-01
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    Article
  16. 16
    Self-Compliance and High Performance Pt/HfO<sub>x</sub>/Ti RRAM Achieved through Annealing
    by Lei Wu, Hongxia Liu, Jinfu Lin, Shulong Wang
    Published 2020-03-01
    “... of the device annealing at 500 &#176;C decreased, and the switching ratio and uniformity improved. Tests...”
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    Article
  17. 17
    Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials
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    Article
  18. 18
    A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
    “... manufacture applicability and remarkably reduce footprint. The physical mechanism of device and the effect...”
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    Article
  19. 19
    Graphene Electro-Optical Switch Modulator by Adjusting Propagation Length Based on Hybrid Plasmonic Waveguide in Infrared Band
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    Article
  20. 20
    Research on the Factors Affecting the Growth of Large-Size Monolayer MoS<sub>2</sub> by APCVD
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    Article
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