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3“.... The results indicate that Au nanoparticles can be used to improve the performance of optoelectronic devices. ...”
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4“... the wavelength 493 nm to 622 nm, the different band-gap shown that these one dimension semiconductor nano...”
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5“... shaping down drastically under forward gate bias and increase the carrier confinement for device operation...”
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6“... sample and AlGaN/GaN heterostructure sample to fabricate Metal-Semiconductor-Metal Ultraviolet...”
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7“... and semiconductor, enhance the property of voltage resistance of device, and promote the resistance capability...”
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8“... devices attract highly attractive potential as next-generation device structure. ZnO-based semiconductors...”
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9“... of optoelectronic devices, different active layer structures and semiconductor processes were used to fabricate...”
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10“... the appropriate device structure for nitride-based metal-semiconductor-metal (MSM) photodetectors to improve...”
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11“... and external electrical terminal to keep IC device active for a long time. However, based on the data...”
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12“...). Fabricate and analysis of their nanowire-based sensor device applications. First of all, we were grown...”
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13“..., one is the discussion of ZnO-based metal-insulator-semiconductor (MIS) photodectors, and another...”
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14by Tien-Kun Lin, 林天坤“..., Schottky diodes and metal-semiconductor-metal (MSM) photoconductive detectors with Ru electrodes were also...”
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15“... complementary metal-oxide-semiconductor (CMOS) device that combines p-MOSFETs and n-MOSFETs was also fabricated...”
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16“.... Such results indicated that our MOS-HFETs devices are very potential for high temperature, high power, and high...”
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17“...-semiconductor-metal ( MSM ) ultraviolet ( UV ) photodetectors. From the experiment results, the electrical...”
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18“... Metal-Insulator-Semiconductor with a PECVD-deposited SiO2 layer. The leakage current of device could...”
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19“...-oxide-semiconductor (MOS) devices of 20-nm technology node, the dielectric material and gate length...”
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20“..., the semiconductor device continues to shrink down, and thus make the switching speed and performance of integrated...”
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