Showing 1 - 20 results of 28 for search 'SEMICONDUCTOR DEVICES', query time: 0.74s Refine Results
  1. 1
    Study on semiconductor devices by high density plasma chemical vapor deposition
    by Yu-Ting Chen, 陳育廷
    Published 2005
    “... semiconductor memories (NVSMs) technology, the SONOS is a multi-dielectric device consisting of an oxide-nitride...”
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  2. 2
    Study of Sol-gel semiconductor material for TFTs application
    by Cheng-hong Yu, 余承鴻
    Published 2006
    “...碩士 === 國立中山大學 === 光電工程研究所 === 94 === ZnO (Zinc-oxide) is a wide bandgap (Eg~3.3 ev ) semiconductor...”
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  3. 3
    Study on Ge Quantum Dots Application for Memory and Optoelectronic Devices
    by Min-Chuan Wang, 王敏全
    Published 2003
    “...碩士 === 國立中山大學 === 物理學系研究所 === 91 === Over the past years, semiconductor quantum crystallite...”
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  4. 4
    Investigation on the ZnO Thin Film for Optoelectronic Device Application
    by Shu-Ching Lin, 林書慶
    Published 2008
    “... generation of optoelectronic devices. Zinc oxide (ZnO) is a II-VI compound semiconductor with a wide direct...”
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  5. 5
    Study of Advance Tungsten Nano-crystal for Non-Volatile Memory Device Application
    by Peng-bo Xi, 奚鵬博
    Published 2007
    “... electrical characteristics in the semiconductor device especially apply on the non-volatile memory. Thirdly...”
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  6. 6
    Physical Mechanisms and device new application of ZnO-based Thin Film Transistor
    by Yu-Chun Chen, 陳禹鈞
    Published 2013
    “... (60 up inches), high resolution potable electronic device and non-glass 3-D display. These new...”
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  7. 7
    Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device
    by Po-Hsun Chen, 陳柏勳
    Published 2018
    “... faces severe challenges when device size shrinks. A thin tunneling oxide layer may cause severe leakage...”
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  8. 8
    Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP
    “...IEEE Journal of the Electron Devices Society...”
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    Article
  9. 9
    Study on electrical mechanism of low-k material and copper interconnection under various mechanism stresses
    by Chia-Hao Hsu, 許家豪
    Published 2008
    “... efficiency, the size of the semiconductor devices becomes smaller and smaller. The surface of the chip...”
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  10. 10
    Investigation of Charge Trapping Characteristic and Reliability Issues for High-k/Metal gate MOSFETs
    by Jou-Miao Shih, 施柔妙
    Published 2011
    “...碩士 === 國立中山大學 === 物理學系研究所 === 99 === Electronic devices such as high power devices, microprocessors...”
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  11. 11
    Physical Mechanism and Reliability Analysis on Advanced SOI MOSFETs and FinFETs
    by Kuan-Ju Liu, 劉冠汝
    Published 2016
    “..., memory devices, and portable devices have become more popular for consumers. These electronic products...”
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  12. 12
    Study on Amorphous Silicon Carbide Barrier Dielectric Materials
    by Chih-Hung Chen, 陳致宏
    Published 2002
    “...碩士 === 國立中山大學 === 物理學系研究所 === 90 === In the generation of deep submicron semiconductor fabrication...”
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  13. 13
    Investigation on the Reliability and Hot Carrier degradation in Advance MOSFET
    by Ying-Hsin Lu, 盧頴新
    Published 2018
    “... and the semiconductor. Furthermore, fast I-V measurements indicate that the device with post-metal deposition annealing...”
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  14. 14
    Investigate on the electric characteristics and physical mechanism of the metal oxide thin film transistor under different environment
    by Yu-chun Chen, 陳禹鈞
    Published 2009
    “... semiconductors will play the important roles for the next optoelectronic devices generation. Zinc oxide (ZnO...”
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  15. 15
    Performance enhancement of ZnGa2O4 Schottky type deep-ultraviolet photodetectors by oxygen supercritical fluid treatment
    “...For semiconductor device applications such as FinFET, MEMS, 2D materials, and wide bandgap...”
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    Article
  16. 16
    Investigation on Negative Bias Temperature Instability and Physical Mechanism of PD-SOI p-MOSFETs
    by Wan-Lin Chung, 鍾菀琳
    Published 2011
    “...-on-insulator p-type metal-oxide-semiconductor field effect transistors (PD-SOI p-MOSFETs). The results indicate...”
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  17. 17
    The evolutional mechanisms of hot carrier degradation in advanced high-k/metal gate MOSFETs
    by Jyun-Yu Tsai, 蔡君昱
    Published 2015
    “... oxide semiconductor field electrical field transistors is driving conventional SiO2-based dielectric...”
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  18. 18
    Electrical Properties of n-MOSFETs under Uniaxial Mechanical Strain
    by Mei-Na Tsai, 蔡美娜
    Published 2012
    “...博士 === 國立中山大學 === 物理學系研究所 === 100 === Metal-oxide-semiconductor field-effect transistors (MOSFETs...”
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  19. 19
    Investigation of Reliability and Physical Mechanisms of Flexible aInGaZnO Thin Film Transistors for Advanced Display
    by Po-Yung Liao, 廖柏詠
    Published 2017
    “... technologies such as high-resolution large-screen LCD and AMOLED. Oxide semiconductor thin film transistors...”
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  20. 20
    Study of Resistance Switching Physical Mechanism inHafnium Oxide Thin Film for Resistive Random Access Memory
    by Jyun-Hao Lou, 劉峻豪
    Published 2012
    “... semiconductor (CMOS) process. The detail physical mechanism is studied by the stable RRAM device (Ti/HfO2/TiN...”
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