Showing 1 - 20 results of 28 for search 'SEMICONDUCTOR DEVICES', query time: 4.08s Refine Results
  1. 1
    by Brusamarello, Lucas
    Published 2013
    ... complementary metal-oxide-semiconductor (CMOS) parameter variations pose a challenge for the design of high...
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  2. 2
    by Brusamarello, Lucas
    Published 2013
    ... complementary metal-oxide-semiconductor (CMOS) parameter variations pose a challenge for the design of high...
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  3. 3
    by Brusamarello, Lucas
    Published 2013
    ... complementary metal-oxide-semiconductor (CMOS) parameter variations pose a challenge for the design of high...
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  4. 4
    by Rossetto, Alan Carlos Junior
    Published 2018
    ...The complementary metal-oxide-semiconductor (CMOS) scaling process of the recent decades, coupled...
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  5. 5
    by Rossetto, Alan Carlos Junior
    Published 2015
    ... radiation and the dielectric layers of semiconductor devices, causing charge buildup in these structures...
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  6. 6
    by Rossetto, Alan Carlos Junior
    Published 2015
    ... radiation and the dielectric layers of semiconductor devices, causing charge buildup in these structures...
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  7. 7
    by Rossetto, Alan Carlos Junior
    Published 2015
    ... radiation and the dielectric layers of semiconductor devices, causing charge buildup in these structures...
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  8. 8
    by Both, Thiago Hanna
    Published 2015
    ... of semiconductor devices; in MOS transistors, this charge trapping affects electrical parameters such as threshold...
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  9. 9
    by Becker, Thales Exenberger
    Published 2018
    ... nanoparticulated zinc oxide (ZnO) as the active semiconductor channel layer are discussed. The growing interest...
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  10. 10
    by Both, Thiago Hanna
    Published 2015
    ... of semiconductor devices; in MOS transistors, this charge trapping affects electrical parameters such as threshold...
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  11. 11
    by Becker, Thales Exenberger
    Published 2018
    ... nanoparticulated zinc oxide (ZnO) as the active semiconductor channel layer are discussed. The growing interest...
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  12. 12
    by Becker, Thales Exenberger
    Published 2018
    ... nanoparticulated zinc oxide (ZnO) as the active semiconductor channel layer are discussed. The growing interest...
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  13. 13
    by Both, Thiago Hanna
    Published 2015
    ... of semiconductor devices; in MOS transistors, this charge trapping affects electrical parameters such as threshold...
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  14. 14
    by Melos, Ricardo Carvalho de
    Published 2018
    ... didactic tool under Random Telegraph Noise effect, present in electronic semiconductor devices, more...
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  15. 15
    by Melos, Ricardo Carvalho de
    Published 2018
    ... didactic tool under Random Telegraph Noise effect, present in electronic semiconductor devices, more...
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  16. 16
    by Melos, Ricardo Carvalho de
    Published 2018
    ... didactic tool under Random Telegraph Noise effect, present in electronic semiconductor devices, more...
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  17. 17
    by Vaz, Pablo Ilha
    Published 2015
    ... circuits and devices. Architecture level for SEE mitigation techniques usually involves redundancy...
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  18. 18
    by Both, Thiago Hanna
    Published 2018
    ... the stability of SRAM cells, for example. Metal-oxide-semiconductor field-effect-transistors (MOSFETs) are known...
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  19. 19
    by Both, Thiago Hanna
    Published 2018
    ... the stability of SRAM cells, for example. Metal-oxide-semiconductor field-effect-transistors (MOSFETs) are known...
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  20. 20
    by Vaz, Pablo Ilha
    Published 2015
    ... circuits and devices. Architecture level for SEE mitigation techniques usually involves redundancy...
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    Others