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1by Brusamarello, Lucas“... complementary metal-oxide-semiconductor (CMOS) parameter variations pose a challenge for the design of high...”
Published 2013
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2by Brusamarello, Lucas“... complementary metal-oxide-semiconductor (CMOS) parameter variations pose a challenge for the design of high...”
Published 2013
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3by Brusamarello, Lucas“... complementary metal-oxide-semiconductor (CMOS) parameter variations pose a challenge for the design of high...”
Published 2013
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4by Rossetto, Alan Carlos Junior“...The complementary metal-oxide-semiconductor (CMOS) scaling process of the recent decades, coupled...”
Published 2018
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5by Rossetto, Alan Carlos Junior“... radiation and the dielectric layers of semiconductor devices, causing charge buildup in these structures...”
Published 2015
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6by Rossetto, Alan Carlos Junior“... radiation and the dielectric layers of semiconductor devices, causing charge buildup in these structures...”
Published 2015
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7by Rossetto, Alan Carlos Junior“... radiation and the dielectric layers of semiconductor devices, causing charge buildup in these structures...”
Published 2015
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8by Both, Thiago Hanna“... of semiconductor devices; in MOS transistors, this charge trapping affects electrical parameters such as threshold...”
Published 2015
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9Caracterização elétrica temporal de transistores de filmes finos de nanopartículas de óxido de zincoby Becker, Thales Exenberger“... nanoparticulated zinc oxide (ZnO) as the active semiconductor channel layer are discussed. The growing interest...”
Published 2018
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10by Both, Thiago Hanna“... of semiconductor devices; in MOS transistors, this charge trapping affects electrical parameters such as threshold...”
Published 2015
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11Caracterização elétrica temporal de transistores de filmes finos de nanopartículas de óxido de zincoby Becker, Thales Exenberger“... nanoparticulated zinc oxide (ZnO) as the active semiconductor channel layer are discussed. The growing interest...”
Published 2018
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12Caracterização elétrica temporal de transistores de filmes finos de nanopartículas de óxido de zincoby Becker, Thales Exenberger“... nanoparticulated zinc oxide (ZnO) as the active semiconductor channel layer are discussed. The growing interest...”
Published 2018
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13by Both, Thiago Hanna“... of semiconductor devices; in MOS transistors, this charge trapping affects electrical parameters such as threshold...”
Published 2015
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14by Melos, Ricardo Carvalho de“... didactic tool under Random Telegraph Noise effect, present in electronic semiconductor devices, more...”
Published 2018
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15by Melos, Ricardo Carvalho de“... didactic tool under Random Telegraph Noise effect, present in electronic semiconductor devices, more...”
Published 2018
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16by Melos, Ricardo Carvalho de“... didactic tool under Random Telegraph Noise effect, present in electronic semiconductor devices, more...”
Published 2018
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17by Vaz, Pablo Ilha“... circuits and devices. Architecture level for SEE mitigation techniques usually involves redundancy...”
Published 2015
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18by Both, Thiago Hanna“... the stability of SRAM cells, for example. Metal-oxide-semiconductor field-effect-transistors (MOSFETs) are known...”
Published 2018
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19by Both, Thiago Hanna“... the stability of SRAM cells, for example. Metal-oxide-semiconductor field-effect-transistors (MOSFETs) are known...”
Published 2018
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20by Vaz, Pablo Ilha“... circuits and devices. Architecture level for SEE mitigation techniques usually involves redundancy...”
Published 2015
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