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1by Xiao-ling Zhang, Yan Liu, Ting Fan, Ning Hu, Zhong Yang, Xi Chen, Zhen-yu Wang, Jun Yang“...A portable multichannel surface plasmon resonance (SPR) biosensor device is presented in this study...”
Published 2017-06-01
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5by Yong Zhang, Danyang Yao, Yan Liu, Cizhe Fang, Shulong Wang, Guosheng Wang, Yan Huang, Xiao Yu, Genquan Han, Yue HaoSubjects: “...synaptic device...”
Published 2021-01-01
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6by Jiuren Zhou, Yue Peng, Genquan Han, Qinglong Li, Yan Liu, Jincheng Zhang, Min Liao, Qing-Qing Sun, David Wei Zhang, Yichun Zhou, Yue Hao“...IEEE Journal of the Electron Devices Society...”
Published 2018-01-01
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7by Yue Peng, Genquan Han, Fenning Liu, Wenwu Xiao, Yan Liu, Ni Zhong, Chungang Duan, Ze Feng, Hong Dong, Yue Hao“...Abstract Traditional ferroelectric devices suffer a lack of scalability. Doped HfO2 thin film...”
Published 2020-06-01
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8“... dark current fluctuations induced by shallow trap centers in BP. The device provides a high...”
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9by Cizhe Fang, Yan Liu, Genquan Han, Yao Shao, Yan Huang, Jincheng Zhang, Yue Hao“... photovoltaic devices or other opto-electronic devices, which will promote the development of ultrathin on-chip...”
Published 2018-01-01
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10“... to devices with 2.5 nm and 9 nm ZrO2. The retention performance of the ZrO2 FeFET can be improved...”
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11“... with control metal oxide semiconductor (MOS) FET. In this experiment, the bottom MIS transistors with different...”
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12by Genquan Han, Yibo Wang, Yan Liu, Hongjuan Wang, Mingshan Liu, Chunfu Zhang, Jincheng Zhang, Buwen Cheng, Yue Hao“... achieve 110% and 75% enhancement in ION, respectively, compared to Ge0.97Sn0.03 devices, at VGS - VTH...”
Published 2015-05-01
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13“... annealing (PDA) on the electrical performance of Ge p-type metal-oxide-semiconductor field-effect...”
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14by Cizhe Fang, Yan Liu, Yibo Wang, Jibao Wu, Genquan Han, Yao Shao, Jincheng Zhang, Yue Hao“... are characterized. GeSn layers show high thermal stability under complementary metal-oxide-semiconductor processing...”
Published 2018-01-01
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15by Yan Liu, Ruoying Kanyang, Genquan Han, Yao Shao, Cizhe Fang, Yan Huang, Siqing Zhang, Jincheng Zhang, Yue Hao“... plasmonic devices....”
Published 2018-01-01
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16“... eff compared to the devices on other orientations. At an inversion charge density Q inv of 3.5 × 1012...”
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17“... to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrO x films devices can...”
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18by Zhizhe Wang, Dazheng Chen, Chunfu Zhang, Zhenhua Lin, Yan Liu, Genquan Han, Jingjing Chang, Jincheng Zhang, Lixin Guo, Yue Hao“... on the MoO3/Ag surface. Meanwhile, ITO-free OSCs also show a good stability. The PCE of the devices still...”
Published 2017-01-01
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19High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfacesby Cizhe Fang, Qiyu Yang, Qingchen Yuan, Xuetao Gan, Jianlin Zhao, Yao Shao, Yan Liu, Genquan Han, Yue Hao“... ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity...”
Published 2021-06-01
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20by Yi Zhang, Genquan Han, Hao Wu, Xiao Wang, Yan Liu, Jincheng Zhang, Huan Liu, Haihua Zheng, Xue Chen, Chang Liu, Yue Hao“...Abstract We investigate the metal-insulator-semiconductor contacts on n-Ge utilizing a ZnO...”
Published 2018-08-01
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