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1“... and devices is a useful method to form metal-oxide-semiconductor HEMT (MOSHEMT). In this thesis, using...”
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2Study on the InGaP/InGaAs Metal-Oxide-Semiconductor Pseudomorphic High Electron Mobility Transistors“...博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 100 === InGaP/InGaAs metal-oxide-semiconductor pseudomorphic...”
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3“... devices using a thin insulator film between the gate electrode and the semiconductor. The use...”
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4“... constant thin film of ZrO2. The deposited ZrO2 can improve device properties by repairing surface defects...”
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5“... gate in AlGaN/GaN HEMTs suffer from high gate leakage current which decrease the devices performance...”
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6“... that improved InGaP/InGaAs pHEMTs performance. In this work, the gate length and width of the device was 0.7μm...”
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8“.... In this work, gate field plate is used to increase the device’s breakdown voltage. In order to reduce gate...”
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9“.... Recently four novel insulating gate device types—metal-oxide-semiconductor HFET (MOSHFET) metal-insulator...”
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10“... are demonstrated. According to the programming/erasing operations, the devices exhibited memory characteristics...”
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11Broadband Miniaturized Doubly Balanced Mixers and Subharmonic Mixers for Ku- to Ka-band Applications“... significantly. The active and passive devices fabricated in III-V compound semiconductor technologies exhibit...”
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12“... aluminum (Al) thin film micromesh structure. The filter is prepared by the semiconductor process of dc...”
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13“...-V) characteristics of metal-oxide- semiconductor (MOS) devices. In capacitance-voltage (C-V...”
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14“...博士 === 國立成功大學 === 光電科學與工程學系 === 100 === Over the past two decades, organic semiconductors have been...”
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15“... the measurement. Also, we use semiconductor process to prove our validity and comparing the difference...”
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16“... sulfonic acid (PANI-CSA) was proposed. From the experimental results observed, the PANI-CSA device without...”
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17“...) technique for gallium arsenide (GaAs) device applications has been proposed. The oxidation system is simple...”
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18“... to the transformation of IGZO thin film from semiconductor to conductor. To prevent hydrogen in substitution for oxygen...”
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19“...) and pentacene. Additionally, we use conducting polymer, polyaniline (PANI), as active layer in the device...”
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20“...-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium...”
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