Showing 1 - 20 results of 35 for search 'SEMICONDUCTOR DEVICES', query time: 0.96s Refine Results
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    by Baoxing Duan, Jingyu Xing, Ziming Dong, Yintang Yang
    Published 2020-01-01
    ...IEEE Journal of the Electron Devices Society...
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    Article
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    by Baoxing Duan, Luoyun Yang, Hao Wu, Yintang Yang
    Published 2020-01-01
    ...IEEE Journal of the Electron Devices Society...
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    Article
  6. 6
    by Licheng Sun, Baoxing Duan, Yintang Yang
    Published 2021-01-01
    ...IEEE Journal of the Electron Devices Society...
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    ... is an indirect band gap semiconductor. The anisotropic calculations show that Si96 exhibits a smaller anisotropy...
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  10. 10
    by Huihui Ma, Junqin Zhang, Bin Zhao, Qun Wei, Yintang Yang
    Published 2017-06-01
    ... structure which is described by CASTEP method indicates they are direct gap semiconductors...
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    Article
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    ...4, and t-Ge3N4 are all wide band gap semiconductor materials, with band gaps of 4.26 eV, 3.94 eV...
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    by Qingyang Fan, Changchun Chai, Qun Wei, Yintang Yang
    Published 2016-05-01
    .... Moreover, m-C3N4 is a quasi-direct-bandgap semiconductor, with a band gap of 4.522 eV, and t-C3N4 is also a...
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    by Qingyang Fan, Changchun Chai, Qun Wei, Yintang Yang
    Published 2016-04-01
    ... results show that SiC2 is an indirect band gap semiconductor, while SiC4 is a quasi-direct band gap...
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    ... to be wide band-gap semiconductors. The pressure induced band gap direct-indirect transition is found...
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    ... is the three-fifths of wurtzite-GaN. Electronic structure study shows that Pnma-GaN is a direct semiconductor...
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    by Kai Fan, Junxiong Wang, Xin Wang, Hui Li, Yintang Yang
    Published 2017-07-01
    ... devices and data volume are increasing dramatically. Fog computing, which extends cloud computing...
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    by Kai Fan, Chen Zhang, Kan Yang, Hui Li, Yintang Yang
    Published 2018-12-01
    ...The Internet of Things (IoT) aims to achieve the interconnection of all devices in our lives. Due...
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