Suggested Topics within your search.
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III-V semiconductors
Gallium nitride
10
Aluminum nitride
8
Semiconductor alloys
5
Wide band gap semiconductors
5
Efficiency
4
Gallium alloys
4
High electron mobility transistors
4
Sapphire
4
Aluminum gallium nitride
3
Boron nitride
3
Device performance
3
Nitrides
3
Optical properties
3
Performance
3
Silicon
3
Substrates
3
Thin films
3
Aluminum alloys
2
Atomic layer deposition
2
Atomic-layer deposition
2
Deep ultraviolet
2
Design approaches
2
Electrolytes
2
Energy gap
2
Gallium arsenide
2
Gate drivers
2
Higher efficiency
2
Indium alloys
2
Indium arsenide
2
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3by Bertness, K.A, Brubaker, M.D, Harvey, T.E, Honarvar, H., Hussein, M.I, Lee, M., Spann, B.T, Treglia, A.C, Tsai, C.-N, Weber, J.C, Yang, L.Subjects: “...III-V semiconductors...”
Published 2023
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4by Baryshnikova, M., Colucci, D., De Koninck, Y., Kunert, B., Langer, R., Mols, Y., Muneeb, M., Pantouvaki, M., Shi, Y., Van Campenhout, J., Van Thourhout, D., Yudistira, D.Subjects: “...Binary semiconductors...”
Published 2022
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5by Baker, M.V, Gillbanks, J., Home, M.A, Khir, F.L.M, Mennell, C., Myers, M., Nener, B.D, Parish, G., Tadich, A.Subjects: “...III-V semiconductors...”
Published 2018
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12by Amano, H., Aoto, K., Kushimoto, M., Sasaoka, C., Schowalter, L.J, Yoshikawa, A., Zhang, Z.Subjects: “...III-V semiconductors...”
Published 2022
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14by Chang, S.-J, Chien, C.-H, Chih, J.H, Hu, C., Huang, Y.-C, Lai, Y.-T, Lin, J.-M, Tang, Y.-T, Tsai, Y.-W, Wang, S.-YSubjects: “...Device performance...”
Published 2022
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15by Balzer, J.C, Ding, Y., Kolpatzeck, K., Moehrle, M., Rehbein, W., Schell, M., Zander, M.Subjects: “...III-V semiconductors...”
Published 2022
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19by Bianco, F., Blaga, C.V, Ciampalini, G., Fabbri, F., Fontcuberta I Morral, A., Pezzini, S., Roddaro, S., Taniguchi, T., Tappy, N., Watanabe, K.Subjects: “...Device performance...”
Published 2022
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20by Abd Rahim, A.F, Abdullah M., Ahmed, N.M, Hassan, Z., Johan Ooi, M.D, Mahmood, A., Radzali, R.Subjects: “...III-V semiconductors...”
Published 2020
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