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Semiconductor devices
Atomic layer etching
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Atoms
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Cost effective
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Cost effectiveness
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Etching
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Graphene
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Silicon
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Substrates
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AC-side
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Absorption edges
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Alumina
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Aluminum oxide
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Aspect ratio
1
Atomic layer
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Atomic layer deposition
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Atomic-layer deposition
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Back contact
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Band gap formation
1
Band structure
1
Bandgap
1
Benchmarking
1
Capacitor clamped inverte
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Carbon layers
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Cell-be
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Cell/B.E
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Cell/BE
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Change conditions
1
Clamped inverter
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Computational modeling
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5by Beckmann, K., Cady, N.C, Cao, Y., Du, X., Fan, D., Hazra, J., Joshi, R., Krishnan, G., Li, Z., Liehr, M., Sun, J., Yang, L.Subjects: “...Semiconductor device modeling...”
Published 2022
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6by Berthold, L., Eschen, W., Gross, H., Kirsche, A., Klas, R., Krause, M., Limpert, J., Loetgering, L., Pertsch, T., Rothhardt, J., Schuster, V., Steinert, M.Subjects: “...Semiconductor devices...”
Published 2022
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7by Vafapour, Z.Subjects: “...Semiconductor device...”
Published 2022
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