-
1by Both, Thiago Hanna“... parameters of 0,35 μm CMOS transistors, fabricated with an AMS C35B4 process, due to total ionizing dose (TID...”
Published 2015
Get full text
Others -
2by Both, Thiago Hanna“... parameters of 0,35 μm CMOS transistors, fabricated with an AMS C35B4 process, due to total ionizing dose (TID...”
Published 2015
Get full text
Others -
3by Both, Thiago Hanna“... parameters of 0,35 μm CMOS transistors, fabricated with an AMS C35B4 process, due to total ionizing dose (TID...”
Published 2015
Get full text
Others -
4by Silva, Michele Gusson Vieira da“...–Semiconductor (CMOS), uma vez que circuitos CMOS estão sujeitos às falhas transientes oriundas de radiação...”
Published 2017
Get full text
Others -
5by Silva, Michele Gusson Vieira da“...–Semiconductor (CMOS), uma vez que circuitos CMOS estão sujeitos às falhas transientes oriundas de radiação...”
Published 2017
Get full text
Others -
6by Silva, Michele Gusson Vieira da“...–Semiconductor (CMOS), uma vez que circuitos CMOS estão sujeitos às falhas transientes oriundas de radiação...”
Published 2017
Get full text
Others -
7by Brusamarello, Lucas“... complementary metal-oxide-semiconductor (CMOS) parameter variations pose a challenge for the design of high...”
Published 2013
Get full text
Others -
8by Brusamarello, Lucas“... complementary metal-oxide-semiconductor (CMOS) parameter variations pose a challenge for the design of high...”
Published 2013
Get full text
Others -
9by Brusamarello, Lucas“... complementary metal-oxide-semiconductor (CMOS) parameter variations pose a challenge for the design of high...”
Published 2013
Get full text
Others -
10by Vaz, Pablo Ilha“... physical mechanisms of radiation effects in semiconductor components and MOS transistors by exploring...”
Published 2015
Get full text
Others -
11by Vaz, Pablo Ilha“... physical mechanisms of radiation effects in semiconductor components and MOS transistors by exploring...”
Published 2015
Get full text
Others -
12by Vaz, Pablo Ilha“... physical mechanisms of radiation effects in semiconductor components and MOS transistors by exploring...”
Published 2015
Get full text
Others -
13by Melos, Ricardo Carvalho de“... didactic tool under Random Telegraph Noise effect, present in electronic semiconductor devices, more...”
Published 2018
Get full text
Others -
14by Melos, Ricardo Carvalho de“... didactic tool under Random Telegraph Noise effect, present in electronic semiconductor devices, more...”
Published 2018
Get full text
Others -
15by Melos, Ricardo Carvalho de“... didactic tool under Random Telegraph Noise effect, present in electronic semiconductor devices, more...”
Published 2018
Get full text
Others