Search Results - Alessandro Chini
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On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs by Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Giovanni Verzellesi
Published in Micromachines (2021-06-01)Get full text
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Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs by Marcello Cioni, Giovanni Giorgino, Alessandro Chini, Antonino Parisi, Giacomo Cappellini, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Ferdinando Iucolano
Published in Electronic Materials (2024-07-01)Get full text
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On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs by Giovanni Giorgino, Cristina Miccoli, Marcello Cioni, Santo Reina, Tariq Wakrim, Virgil Guillon, Nossikpendou Yves Sama, Pauline Gaillard, Mohammed Zeghouane, Hyon-Ju Chauveau, Maria Eloisa Castagna, Aurore Constant, Ferdinando Iucolano, Alessandro Chini
Published in Micromachines (2025-07-01)Get full text
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Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies by Giovanni Giorgino, Marcello Cioni, Cristina Miccoli, Leonardo Gervasi, Marcello Francesco Salvatore Giuffrida, Martina Ruvolo, Maria Eloisa Castagna, Giacomo Cappellini, Giuseppe Luongo, Maurizio Moschetti, Aurore Constant, Cristina Tringali, Ferdinando Iucolano, Alessandro Chini
Published in e-Prime: Advances in Electrical Engineering, Electronics and Energy (2023-12-01)Get full text
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