Search Results - Ryo Ohshima

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    All‐Electric Spin Device Operation Using the Weyl Semimetal, WTe2, at Room Temperature by Kosuke Ohnishi, Motomi Aoki, Ryo Ohshima, Ei Shigematsu, Yuichiro Ando, Taishi Takenobu, Masashi Shiraishi

    Published in Advanced Electronic Materials (2023-01-01)
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    Stability of spin XOR gate operation in silicon based lateral spin device with large variations in spin transport parameters by Ryoma Ishihara, Soobeom Lee, Yuichiro Ando, Ryo Ohshima, Minori Goto, Shinji Miwa, Yoshishige Suzuki, Hayato Koike, Masashi Shiraishi

    Published in AIP Advances (2019-12-01)
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