Search Results - Shuxiang Sun

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  1. 1

    Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer by Shuxiang Sun, Lulu Liu, Gangchuan Qu, Xintong Xie, J. Ajayan

    Published in Micromachines (2025-06-01)
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  2. 2

    Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer by Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo

    Published in Micromachines (2024-09-01)
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  3. 3

    Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage by Shuxiang Sun, Xintong Xie, Pengfei Zhang, Zhijia Zhao, Jie Wei, Xiaorong Luo

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  4. 4

    Novel Bidirectional ESD Circuit for GaN HEMT by Pengfei Zhang, Cheng Yang, Jingyu Shen, Xiaorong Luo, Gaoqiang Deng, Shuxiang Sun, Yuxi Wei, Jie Wei

    Published in Micromachines (2025-01-01)
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