Conduction Performance Evaluation of Silicon and SiC Power Semiconductors for Solid-State DC Breakers

• Published in: IEEE Access
• Main Authors: Andreas Giannakis, Dimosthenis Peftitsis
• Format: Article
• Language: English
• Published: IEEE 2022-01-01
• Subjects: DC circuit breakers; losses; power semiconductor devices
• Online Access: https://ieeexplore.ieee.org/document/9874788/

The main obstacle for the further development and commercialization of solid-state DC circuit breakers is the high ON-state power losses caused by the active power semiconductor devices. This paper presents an experimental evaluation of the electrical ON-state performance among several commercial high-power semiconductor device technologies rated at <inline-formula> <tex-math notation="LaTeX">$1200V$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$1700V$ </tex-math></inline-formula> at elevated temperatures. In addition, the potential of reducing ON-state losses by applying the maximum gate voltage, namely overdriving, has been assessed. It is shown that under nominal gate voltages, the normally-ON silicon carbide junction-field-effect transistor exhibits the lowest ON-state losses for both voltage classes, as well as at both temperatures. By using the overdriving concept, the ON-state voltage of silicon insulated-gate bipolar transistors has been minimized up to 10&#x0025;. In addition to that, both the silicon carbide metal-oxide-semiconductor field effect transistors and normally-ON junction-field-effect transistors experience voltage reduction up to 16&#x0025; and 33&#x0025; respectively when overdriving, at elevated junction temperatures.