Electrocatalytic activity of InN/InGaN quantum dots

We present a basic, comprehensive study of the electrocatalytic activity of epitaxial InN/InGaN quantum dots (QDs) by cyclic voltammetry, electrochemical impedance spectroscopy, linear sweep voltammetry and capacitance-voltage measurements, using the ferro/ferricyanide redox probe. Key is the direct...

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Published in:Electrochemistry Communications
Main Authors: Hongjie Yin, Yinping Qian, Lingyun Xie, Changkun Song, Xingyu Wang, Hedong Chen, Peng Wang, Guofu Zhou, Richard Nötzel
Format: Article
Language:English
Published: Elsevier 2019-09-01
Online Access:http://www.sciencedirect.com/science/article/pii/S1388248119301778
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author Hongjie Yin
Yinping Qian
Lingyun Xie
Changkun Song
Xingyu Wang
Hedong Chen
Peng Wang
Guofu Zhou
Richard Nötzel
author_facet Hongjie Yin
Yinping Qian
Lingyun Xie
Changkun Song
Xingyu Wang
Hedong Chen
Peng Wang
Guofu Zhou
Richard Nötzel
author_sort Hongjie Yin
collection DOAJ
container_title Electrochemistry Communications
description We present a basic, comprehensive study of the electrocatalytic activity of epitaxial InN/InGaN quantum dots (QDs) by cyclic voltammetry, electrochemical impedance spectroscopy, linear sweep voltammetry and capacitance-voltage measurements, using the ferro/ferricyanide redox probe. Key is the direct proof of the dependence of the catalytic activity on the QD structural properties and of the existence and overall tunability of high positive surface charge on the QDs being in origin of the catalytic activity together with the zero-dimensional electronic properties. This fundamental assessment paves the way to fine-tuning the artificial QD structure as efficient catalyst to further boost the performance of biosensors and photoanodes for solar hydrogen generation. Keywords: Quantum dots, InN, InGaN, Catalysis
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spelling doaj-art-13e53190830b43ea826b3cb8cf2ff20b2025-08-19T22:18:59ZengElsevierElectrochemistry Communications1388-24812019-09-0110610.1016/j.elecom.2019.106514Electrocatalytic activity of InN/InGaN quantum dotsHongjie Yin0Yinping Qian1Lingyun Xie2Changkun Song3Xingyu Wang4Hedong Chen5Peng Wang6Guofu Zhou7Richard Nötzel8Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR ChinaGuangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR ChinaGuangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR ChinaGuangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR ChinaGuangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR ChinaGuangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR ChinaGuangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR ChinaGuangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China; National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, PR China; Academy of Shenzhen Guohua Optoelectronics, Shenzhen 518110, PR China; Corresponding author at: Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China.Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China; National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, PR China; Corresponding author at: Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China.We present a basic, comprehensive study of the electrocatalytic activity of epitaxial InN/InGaN quantum dots (QDs) by cyclic voltammetry, electrochemical impedance spectroscopy, linear sweep voltammetry and capacitance-voltage measurements, using the ferro/ferricyanide redox probe. Key is the direct proof of the dependence of the catalytic activity on the QD structural properties and of the existence and overall tunability of high positive surface charge on the QDs being in origin of the catalytic activity together with the zero-dimensional electronic properties. This fundamental assessment paves the way to fine-tuning the artificial QD structure as efficient catalyst to further boost the performance of biosensors and photoanodes for solar hydrogen generation. Keywords: Quantum dots, InN, InGaN, Catalysishttp://www.sciencedirect.com/science/article/pii/S1388248119301778
spellingShingle Hongjie Yin
Yinping Qian
Lingyun Xie
Changkun Song
Xingyu Wang
Hedong Chen
Peng Wang
Guofu Zhou
Richard Nötzel
Electrocatalytic activity of InN/InGaN quantum dots
title Electrocatalytic activity of InN/InGaN quantum dots
title_full Electrocatalytic activity of InN/InGaN quantum dots
title_fullStr Electrocatalytic activity of InN/InGaN quantum dots
title_full_unstemmed Electrocatalytic activity of InN/InGaN quantum dots
title_short Electrocatalytic activity of InN/InGaN quantum dots
title_sort electrocatalytic activity of inn ingan quantum dots
url http://www.sciencedirect.com/science/article/pii/S1388248119301778
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AT xingyuwang electrocatalyticactivityofinninganquantumdots
AT hedongchen electrocatalyticactivityofinninganquantumdots
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