Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer

Multi-level operation, conventionally obtained in ferroelectric devices thanks to a domain-dependent inhomogeneous polarization, poses a big challenge for highly-scaled ferroelectric devices, where the number of ferroelectric domains is drastically reduced. In this work, we study a highly scaled bac...

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Bibliographic Details
Published in:	IEEE Access
Main Authors:	Chiara Rossi, Daniel Lizzit, David Esseni
Format:	Article
Language:	English
Published:	IEEE 2025-01-01
Subjects:	BEOL integration ferroelectric field-effect transistor (FeFET) metal-ferroelectric–metal-insulator–semiconductor (MFMIS) TCAD simulation
Online Access:	https://ieeexplore.ieee.org/document/10966879/

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