Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films

SiO2 or Cu-doped SiO2 (Cu:SiO2) insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM) cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS) at room temperature. The experimental results show...

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Bibliographic Details
Published in:	Advances in Materials Science and Engineering
Main Authors:	Jian-Yang Lin, Bing-Xun Wang
Format:	Article
Language:	English
Published:	Wiley 2014-01-01
Online Access:	http://dx.doi.org/10.1155/2014/594516

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