Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate

Recently, tin oxide (SnO<sub>2</sub>) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (V<sub>O</sub>) concentratio...

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Bibliographic Details
Published in:	Membranes
Main Authors:	Ziyan He, Xu Zhang, Xiaoqin Wei, Dongxiang Luo, Honglong Ning, Qiannan Ye, Renxu Wu, Yao Guo, Rihui Yao, Junbiao Peng
Format:	Article
Language:	English
Published:	MDPI AG 2022-06-01
Subjects:	tetraethyl orthosilicate tin oxide thin-film transistors oxygen vacancy
Online Access:	https://www.mdpi.com/2077-0375/12/6/590

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