Optical Properties of Type-Ⅱ InAs/GaSb Superlattices for Wide Band Infrared Detection

InAs/GaSb type-Ⅱ superlattices (T2SLs) are considered as high-quality material for the third-generation infrared detectors due to the special energy band structure and mature material growth technology. This paper introduces the optical properties of InAs/GaSb T2SLs for long-wave and sho...

Full description

Bibliographic Details
Published in:	Hangkong bingqi
Main Author:	Li Hongkai, Li Mo, Dong Shangwei, Hong Jin, Chen Ye, Jing Chengbin, Yue Fangyu, Chu Junhao
Format:	Article
Language:	Chinese
Published:	Editorial Office of Aero Weaponry 2021-12-01
Subjects:	\|inas/gasb\|type-Ⅱ superlattices\|multi-band detection\|raman spectroscopy\|optical pro-perty\|infrared detector
Online Access:	https://www.aeroweaponry.avic.com/fileup/1673-5048/PDF/1640923512726-709188793.pdf

Similar Items

InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates
by: Klaudia Hackiewicz, et al.
Published: (2019-10-01)

Research Review of InAs/GaSb Superlattice Mesa Etching Process
by: Zhang Xiangyu, Jiang Dongwei, He Wen, Wang Jinzhong
Published: (2024-10-01)

Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design
by: E. Gomółka, et al.
Published: (2018-06-01)

Bandgap Engineering in InAs/GaSb II Superlattices: Modulation and Vacancy Defects Analysis
by: Yan Jiang, et al.
Published: (2025-03-01)

The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes
by: Krzysztof Czuba, et al.
Published: (2021-10-01)

Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories
by: Shuiliu Fang, et al.
Published: (2022-04-01)

The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
by: Jiabo Liu, et al.
Published: (2023-03-01)

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array
by: Yan Teng, et al.
Published: (2021-01-01)

High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD
by: He Zhu, et al.
Published: (2021-12-01)

Edge transport in the trivial phase of InAs/GaSb
by: Fabrizio Nichele, et al.
Published: (2016-01-01)

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si
by: Marina Baryshnikova, et al.
Published: (2020-04-01)

Thermoelectrically-Cooled InAs/GaSb Type-II Superlattice Detectors as an Alternative to HgCdTe in a Real-Time Mid-Infrared Backscattering Spectroscopy System
by: Raphael Müller, et al.
Published: (2020-12-01)

Complementary Barrier Infrared Detector Architecture for Long-Wavelength Infrared InAs/InAsSb Type-II Superlattice
by: David Z. Ting, et al.
Published: (2022-12-01)

Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells
by: M Meyer, et al.
Published: (2023-01-01)

Design and performance of GaSb-based quantum cascade detectors
by: Giparakis Miriam, et al.
Published: (2024-01-01)

Response Time of III-V Multistage Detectors Based on the “Ga-Free” InAs/InAsSb Type-II Superlattice
by: Karol Dąbrowski, et al.
Published: (2024-02-01)

A comparative study of InGaAs/InAsSb and InAs/InAsSb strained layer superlattices
by: H. X. Yin, et al.
Published: (2025-07-01)

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition
by: Xianghai Ji, et al.
Published: (2017-06-01)

The Dependence of InAs/InAsSb Superlattice Detectors’ Spectral Response on Molecular Beam Epitaxy Growth Temperature
by: Krystian Michalczewski, et al.
Published: (2022-01-01)

InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors
by: David Z. Ting, et al.
Published: (2020-10-01)

InAs–InP Superlattice Nanowires with Tunable Phonon Frequencies
by: V. Zannier, et al.
Published: (2024-06-01)

Optical Properties of GaSb Nanofibers
by: Perez-Bergquist Alejandro, et al.
Published: (2011-01-01)

A Strain-Compensated InGaAs/InGaSb Type-II Superlattice Grown on InAs Substrates for Long-Wavelength Infrared Photodetectors
by: Hao Zhou, et al.
Published: (2025-07-01)

Investigation of the Absorption Spectrum of InAs Doping Superlattice Solar Cells
by: Ruiqin Peng, et al.
Published: (2024-04-01)

InAs/InAsSb Type-II Superlattice Mid-Wavelength Infrared Focal Plane Array With Significantly Higher Operating Temperature Than InSb
by: David Z. Ting, et al.
Published: (2018-01-01)

ABLAȚIE LASER APLICATA PENTRU SINTEZA FILMELOR SUBȚIRI DE GaSb‹Fe› ȘI GaSb‹Mn›
by: Mariana OSIAC, et al.
Published: (2020-01-01)

Extended Shortwave Infrared T2SL Detector Based on AlAsSb/GaSb Barrier Optimization
by: Jing Yu, et al.
Published: (2025-05-01)

Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer
by: Keming Cheng, et al.
Published: (2024-11-01)

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
by: D. Benyahia, et al.
Published: (2018-07-01)

Band-to-Band Transitions in InAs/GaSb Multi-Quantum-Well Structures Using k.p Theory: Effects of Well/Barrier Width and Temperature
by: S. Bahareh Seyedein Ardebili, et al.
Published: (2023-01-01)

Growth of Au-seeded GaAs-GaSb nanowires explored in environmental TEM
by: Marnauza Mikelis, et al.
Published: (2024-01-01)

InAs/InAsSb Strain-Balanced Superlattices for Longwave Infrared Detectors
by: Tetiana Manyk, et al.
Published: (2019-04-01)

Interface Engineering and Electron-Hole Wave Function Overlap of InAs/AlSb Superlattice Infrared Detectors
by: Jing Yu, et al.
Published: (2023-11-01)

Design and calculation of photoelectric properties of resonance enhanced InAs/GaSb type-II superlattices photodetectors with diffraction rings structure
by: Yanan Du, et al.
Published: (2024-06-01)

The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays
by: Marta Różycka, et al.
Published: (2023-11-01)

Analysis of InAs/InAsSb Superlattice Miniband Positions for a Cascade LWIR Detector
by: K. Murawski, et al.
Published: (2025-01-01)

Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window
by: Lucie Leguay, et al.
Published: (2024-01-01)

Determination of the Strain Influence on the InAs/InAsSb Type-II Superlattice Effective Masses
by: Tetiana Manyk, et al.
Published: (2022-10-01)

On the Study of Dislocation Density in MBE GaSb-Based Structures
by: Agata Jasik, et al.
Published: (2020-11-01)

Optical Characterization of the Interband Cascade LWIR Detectors with Type-II InAs/InAsSb Superlattice Absorber
by: Krzysztof Murawski, et al.
Published: (2024-08-01)