Improvement of β-SiC Synthesis Technology on Silicon Substrate

This article presents an enhanced method for synthesizing β-SiC on a silicon substrate, utilizing porous silicon as a buffer layer, followed by thermal carbide formation. This approach ensured strong adhesion of the SiC film to the substrate, facilitating the creation of a hybrid hetero-structure of...

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Bibliographic Details
Published in:	Technologies
Main Authors:	Yana Suchikova, Sergii Kovachov, Ihor Bohdanov, Artem L. Kozlovskiy, Maxim V. Zdorovets, Anatoli I. Popov
Format:	Article
Language:	English
Published:	MDPI AG 2023-10-01
Subjects:	silicon carbide silicon electrochemical etching solar cells carbonization annealing
Online Access:	https://www.mdpi.com/2227-7080/11/6/152

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